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H11F1

PHOTO FET OPTOCOUPLERS

Courtesy/Thanks to: Fairchild Semiconductor

Description: The H11F series consists of a Gallium-
Aluminum-Arsenide IRED emitting diode
coupled to a symmetrical bilateral
silicon photodetector.
The detector is electrically isolated
from the input and performs like an
ideal isolated FET designed for
distortion-free
control of low level AC and DC analog
signals. The H11F series devices are
mounted in dual in-line packages.

FEATURES
As a remote variable resistor
• ≤100Ω to ≥300MΩ
• ≥99.9% linearity
• ≤15 pF shunt capacitance
• ≥100 GΩ I/O isolation resistance As an
analog switch
• Extremely low offset voltage
• 60 V pk-pk signal capability
• No charge injection or latch-up
• t on , t off ≤15 μS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g.
H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band
switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D
conversion

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Files
h11f1.pdf
   Datasheet for the H11F1.
h11f1pin.jpg
   Pin configuration for the H11F1.